Pocket implanted n-MOSFET structure with split drains.
By A Mystery Man Writer
6. Applications
The effects of source/drain and gate overlap on the performance of carbon nanotube field effect transistors - ScienceDirect
Pocket implanted n-MOSFET structure.
6. Applications
6. Applications
PDF) A Semi-Analytical Drain Current Deflection Model for the
Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFET - ScienceDirect
A half micron MOSFET using double implanted LDD
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Why is source and drain orientation important in VLSI while dealing with well proximity effect? - Quora
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